Revolutionizing CMOS VLSI with Innovative Memory Design Techniques
DOI:
https://doi.org/10.63995/BDUH3010Keywords:
Multi-Level Cell (MLC) Storage; Resistive RAM (ReRAM); Spin-Transfer Torque Magnetic RAM (STT-MRAM); VLSI Technology; 3D Memory StackingAbstract
The revolution in CMOS VLSI (Complementary Metal-Oxide-Semiconductor Very-Large-Scale Integration) technology is being driven by innovative memory design techniques that address the ever-growing demand for faster, smaller, and more power-efficient devices. Traditional memory architectures are being reimagined to overcome limitations in speed, density, and energy consumption. Techniques such as multi-level cell (MLC) storage, resistive RAM (ReRAM), and spin-transfer torque magnetic RAM (STT-MRAM) are at the forefront of this transformation, offering significant improvements over conventional SRAM and DRAM technologies. MLC storage increases memory density by storing multiple bits per cell, while ReRAM and STT-MRAM leverage novel materials and mechanisms to enhance speed and reduce power usage. These advancements are critical for applications ranging from high-performance computing to portable electronics, where memory performance directly impacts overall system efficiency and capability. Furthermore, integration of 3D memory stacking and neuromorphic computing architectures is paving the way for future developments, enabling even greater data processing capabilities within compact form factors. The adoption of these cutting-edge memory design techniques in CMOS VLSI not only pushes the boundaries of current technology but also sets the stage for the next generation of electronic devices. As these innovations continue to mature, they promise to revolutionize the landscape of memory technology, driving unprecedented advancements in computing and electronic systems.
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